VS3080AD - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

VS3080AD designed by the trench processing techniques to achieve extremely low on-resistance.

Features

Low On-Resistance.
Fast Switching.
100% Avalanche Tested.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.

Vanguard Semiconductor

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Datasheet Details

Part number	VS3080AD
Manufacturer	Vanguard Semiconductor
File Size	254.97 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	VS3080AD Datasheet
Additional preview pages of the VS3080AD datasheet.

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Full PDF Text Transcription

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VS3080AD 30V/90A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS3080AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Published: Jun 20, 2018 |