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Si8461DB - P-Channel MOSFET

Si8461DB Description

www.vishay.com Si8461DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.100 at VGS = -4.5 V 0.118 at VGS =.

Si8461DB Features

* TrenchFET® power MOSFET
* Ultra small 1 mm x 1 mm maximum outline
* Ultra-thin 0.548 mm maximum height

Si8461DB Applications

* Load switch
* Battery switch
* Charger switch S G P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TA = 25 °C TA =

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P-Channel MOSFET Vishay Intertechnology
Vishay Intertechnology Si8461DB-like datasheet