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N-Channel 80-V (D-S) MOSFET
Si4896DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
80 0.0165 at VGS = 10 V 0.022 at VGS = 6.0 V
ID (A) 9.5 8.3
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4896DY-T1-E3 (Lead (Pb)-free) Si4896DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
9.5 6.7 7.6 5.4
Pulsed Drain Current
IDM 50
Avalanche Current
L = 0.
SI4896DY Datasheet
