* Optimal Design 550 0.25 - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
* Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Me
SIHG460B Datasheet (247.97 KB)
SIHG460B
Vishay ↗ Siliconix
247.97 KB
Power mosfet.
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Q.
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