* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Increased robustness due to low Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS
SIHG47N60EF Datasheet (199.24 KB)
SIHG47N60EF
199.24 KB
Mosfet.
www.vishay.com
SiHG47N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (.
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