SIHG47N60S-E3
Vishay ↗ Siliconix
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(sihg22n60s-e3 / sihg47n60s-e3) power mosfet.
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PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. at 25 °C () Qg max. (nC) Qgs (n.
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isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-.
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.
SIHG47N60E - Power MOSFET
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VDS (V) at TJ max. RDS(.
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VDS (V) at TJ max. RDS(on) max. at 25 °C (.
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VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC.
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VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Q.
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V.