SUB75N06-08 Datasheet - Vishay Siliconix

SUB75N06-08 N-Channel MOSFET

www.DataSheet4U.com SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G D S Top View SUB75N06-08 S N-Channel MOSFET rDS(on) (W) 0.008 ID (A) 75a D G D S Top View SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) www.DataSheet4U.com Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR Limit "20 75a 55 240 60 280 187c Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed D.

SUB75N06-08_VishaySiliconix.pdf