Vishay Siliconix manufacturer logo Part number: Si2319CDS Manufacturer: Vishay ↗ Siliconix File Size: 212.45kb Download: 📄 Datasheet Description: P-channel 40 v (d-s) mosfet.
Si2319 - P-Channel Enhancement MOSFET (Nanxin) Features ·Low On resistance. ·-4.5V drive. ·RoHS pliant. Si2319 P-Channel Enhancement MOSFET Si2319 Halogen-Free Product Package Dimensions Sp.
Si2319DS - P-Channel 40-V (D-S) MOSFET (Vishay Siliconix) Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −40 FEATURES D TrenchFETr Power MOSFET ID (A)b rDS(on) (W) 0.082 @ VG.
SI2310 - N-channel FET (MCC) MCC R Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
SI2310 - N-Channel Power MOSFET (CCSemi) MOSFET N-Channel Power MOSFET SI2310 Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=2.
SI2310 - N-channel MOSFET (PUOLOP) SI2310 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 28mΩ RDS(ON) Vgs@2 5V, Ids@4 5A < 35mΩ Features Advanced trench p.
SI2311DS - P-Channel MOSFET (Vishay Siliconix) P-Channel 1.8-V (G-S) MOSFET Si2311DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.045 at VGS = - 4.5 V - 8 0.072 at VGS = - 2.5 V 0.1.
SI2312 - 20V N-Channel MOSFET (JinYu) 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m.
Si2312 - N-Channel MOSFET (SiPU) Si2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
SI2312 - N-Channel MOSFET (MCC) MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth # $ % # .
SI2312 - N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS) SI2312 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 。 Trench FET Power MO.