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SiHF9Z14L Power MOSFET

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Description

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 12 Qgs.
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* Advanced Process Technology
* Surface Mount (IRF9Z14S, SiHF9Z14S)
* Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
* 175 °C Operating Temperature
* Fast Switching
* P-Channel
* Ful

Applications

* The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection r

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SiHF9Z14L Power MOSFET Vishay Siliconix
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