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SiHF9Z24 Power MOSFET

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Description

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.co.
G S G D D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d.

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Features

* - 60 0.28
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* P-Channel
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS
* COMPLIANT TO-2

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9Z24PbF SiHF9Z24-E3 IRF9Z24 SiHF9Z24 ABSOLUTE MAXIMUM RATINGS TC =

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