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SiHF9Z10 Power MOSFET

SiHF9Z10 Description

Power MOSFET IRF9Z10, SiHF9Z10 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

SiHF9Z10 Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* P-Channel
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMPLIANT D

SiHF9Z10 Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S

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