SiHFBE20 Power MOSFET

Vishay Siliconix

Description

IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 38 5.0 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

📥 Download Datasheet

SiHFBE20 Datasheet Preview — Preview of SiHFBE20 PDF

Datasheet Specifications

Part number: SiHFBE20
Manufacturer: Vishay ↗ Siliconix
File Size: 750.31 KB
Datasheet: SiHFBE20_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 800 6.5
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFBE20PbF SiHFBE20-E3 IRFBE20 SiH

SiHFBE20 Distributors

📁 Related Datasheet

SiHFBC40A SiHFBF30S SiHF065N60E SiHF074N65E SIHF12N60E SiHF15N60E

📌 All Tags

SiHFBE20 Power MOSFET Vishay Siliconix

Vishay Siliconix SiHFBE20-like datasheet