SiHFBE30 Power MOSFET

Vishay Siliconix

Description

Power MOSFET IRFBE30, SiHFBE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFBE30
Manufacturer: Vishay ↗ Siliconix
File Size: 1.14 MB
Datasheet: SiHFBE30_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S

SiHFBE30 Distributors

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SiHFBE30 Power MOSFET Vishay Siliconix

Vishay Siliconix SiHFBE30-like datasheet