Datasheet Details
- Part number
- SiHFI720G
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 1.26 MB
- Datasheet
- SiHFI720G_VishaySiliconix.pdf
- Description
- Power MOSFET
SiHFI720G Description
IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U..
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
SiHFI720G Features
* 400 1.8
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available
Available
RoHS
SiHFI720G Applications
* The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single s
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