SiHFI740G Power MOSFET

Vishay Siliconix

Description

www.vishay.com IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (nC) Configuration .
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFI740G
Manufacturer: Vishay ↗ Siliconix
File Size: 845.39 KB
Datasheet: SiHFI740G_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available
* Sink to lead creepage distance = 4.8 mm Available
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single scr

SiHFI740G Distributors

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SiHFI740G Power MOSFET Vishay Siliconix

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