Datasheet4U Logo Datasheet4U.com

SiHFI9610G Power MOSFET

📥 Download Datasheet  Datasheet Preview Page 1

Description

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4.
G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized.

📥 Download Datasheet

Preview of SiHFI9610G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* P-Channel
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Available 3.0 RoHS
* COMPLIANT

Applications

* The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single s

SiHFI9610G Distributors

📁 Related Datasheet

📌 All Tags

Vishay Siliconix SiHFI9610G-like datasheet