SiHFI9610G - Power MOSFET

Vishay Siliconix

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Datasheet Details

Part number	SiHFI9610G
Manufacturer	Vishay Siliconix
File Size	572.35 KB
Description	Power MOSFET
Datasheet	SiHFI9610G_VishaySiliconix.pdf

SiHFI9610G Product details

Description

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.This isolation is equivalent to using a 100 micr

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
P-Channel.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available Available 3.0 RoHS.

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Published: Dec 8, 2008 |