SiHFI9620G Power MOSFET

Vishay Siliconix

Description

IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFI9620G
Manufacturer: Vishay ↗ Siliconix
File Size: 1.40 MB
Datasheet: SiHFI9620G_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Dist. = 4.8 mm
* P-Channel
* Dynamic dV/dt
* Low Thermal Resistance
* Lead (Pb)-free Available Available 1.5 RoHS
* COMPLIANT TO-220 FUL

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

SiHFI9620G Distributors

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SiHFI9620G Power MOSFET Vishay Siliconix

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