SiHFI9530G - Power MOSFET

Vishay Siliconix

📥 Download Datasheet

SiHFI9530G Datasheet Preview — Preview of SiHFI9530G PDF

Datasheet Details

Part number	SiHFI9530G
Manufacturer	Vishay Siliconix
File Size	1.21 MB
Description	Power MOSFET
Datasheet	SiHFI9530G_VishaySiliconix.pdf

SiHFI9530G Product details

Description

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.This isolation is equivalent to using a 100 micr

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
P-Channel.
175 °C Operating Temperature.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available Available 0.30 RoHS.

📁 SiHFI9530G Similar Datasheet

SIHFI530G - Power MOSFET (Vishay)
SiHFIB5N65A - Power MOSFET (Vishay)
SiHFIB6N60A - Power MOSFET (Vishay)
SiHFIBC40GLC - Power MOSFET (Vishay)
SiHF065N60E - Power MOSFET (Vishay)
SiHF074N65E - Power MOSFET (Vishay)
SIHF12N60E - Power MOSFET (Vishay)
SiHF15N60E - Power MOSFET (Vishay)

Other Datasheets by Vishay Siliconix

SiHFI9520G - Power MOSFET
SiHFI9540G - Power MOSFET
SiHFI9610G - Power MOSFET
SiHFI9620G - Power MOSFET
SiHFI9630G - Power MOSFET
SiHFI9634G - Power MOSFET

Published: Dec 8, 2008 |