SiHFI9540G Datasheet - Vishay Siliconix

SiHFI9540G Power MOSFET

G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-indus.

SiHFI9540G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Dist. = 4.8 mm

* P-Channel

* 175 °C Operating Temperature

* Dynamic dV/dt

* Low Thermal Resistance

* Lead (Pb)-free Available Availabl

SiHFI9540G Datasheet (727.36 KB)