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SiHFIBF20G Power MOSFET

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Description

IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Isolated Package 900 8.0
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Available RoHS

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

SiHFIBF20G Distributors

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