Datasheet Details
- Part number
- SiHFIBF30G
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 1.16 MB
- Datasheet
- SiHFIBF30G_VishaySiliconix.pdf
- Description
- Power MOSFET
SiHFIBF30G Description
IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 1.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
SiHFIBF30G Features
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available
Available
RoHS
SiHFIBF30G Applications
* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc
📁 Related Datasheet
📌 All Tags