TSHG5210 - High Speed Infrared Emitting Diode

Vishay Siliconix

TSHG5210 Datasheet Preview — Preview of TSHG5210 PDF

Datasheet Details

Part number	TSHG5210
Manufacturer	Vishay ↗ Siliconix
File Size	101.74 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG5210_VishaySiliconix.pdf

TSHG5210 Product details

Description

TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength:.
p = 850 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity:  = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 18 MHz.
Good spectral matching with CMOS cameras.
Com.

📁 TSHG5210 Similar Datasheet

TSH10 - 140MHz BANDWIDTH LOW NOISE SINGLE OPERATIONAL AMPLIFIER (STMicroelectronics)
TSH11 - 120MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER (STMicroelectronics)
TSH110 - WIDE BAND/ LOW NOISE OPERATIONAL AMPLIFIERS (STMicroelectronics)
TSH111 - WIDE BAND/ LOW NOISE OPERATIONAL AMPLIFIERS (STMicroelectronics)
TSH112 - WIDE BAND/ LOW NOISE OPERATIONAL AMPLIFIERS (STMicroelectronics)
TSH113 - WIDE BAND/ LOW NOISE OPERATIONAL AMPLIFIERS (STMicroelectronics)
TSH114 - WIDE BAND/ LOW NOISE OPERATIONAL AMPLIFIERS (STMicroelectronics)
TSH120 - 2.2V to 5V video buffer (STMicroelectronics)

Other Datasheets by Vishay Siliconix

TSHG5410 - High Speed Infrared Emitting Diode
TSHG5510 - High Speed Infrared Emitting Diode
TSHG6200 - High Speed Infrared Emitting Diode
TSHG6210 - High Speed Infrared Emitting Diode
TSHG6400 - High Speed IR Emitting Diode
TSHG6410 - High Speed Infrared Emitting Diode

Published: Feb 2, 2012 |