TSHG5210 High Speed Infrared Emitting Diode

Vishay Siliconix

Description

www.vishay.com TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8390 .
TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

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Datasheet Specifications

Part number: TSHG5210
Manufacturer: Vishay ↗ Siliconix
File Size: 101.74 KB
Datasheet: TSHG5210_VishaySiliconix.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength:
* p = 850 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity:  = ±

Applications

* in
* Infrared radiation source for operation with CMOS cameras
* High speed IR data transmission
* Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG5210 Ie (mW/sr) 230 Note
* Test conditions see table “Basic Characteristics”  (deg) ± 10
* p (nm)

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TSHG5210 High Speed Infrared Emitting Diode Vishay Siliconix

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