TSHG5510

High Speed Infrared Emitting Diode

Vishay Siliconix

* Package type: leaded

* Package form: T-1¾

* Dimensions (in mm): Ø 5

* Leads with stand-off

* Peak wavelength: λp = 830 nm

* High reliability

* High radiant power

* High radiant intensity

* Angle of half intensity: ϕ = ± 38°

TSHG5510

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High speed infrared emitting diode.

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TSHG5510 High Speed Infrared Emitting Diode Vishay Siliconix

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