TSHG5510 - High Speed Infrared Emitting Diode

Vishay Siliconix

TSHG5510 Datasheet Preview — Preview of TSHG5510 PDF

Datasheet Details

Part number	TSHG5510
Manufacturer	Vishay ↗ Siliconix
File Size	88.13 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG5510_VishaySiliconix.pdf

TSHG5510 Product details

Description

TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength: λp = 830 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 38°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.
Good spectral matching to Si photodetectors.
Complia.

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Published: Feb 2, 2012 |