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TSHG5410 High Speed Infrared Emitting Diode

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Description

www.DataSheet.co.kr TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero .
TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

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Features

* Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radia

Applications

* Infrared radiation source for operation with CMOS cameras
* High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG5410 Ie (mW/sr) 90 ϕ (deg) ± 18 λp (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG5410 Not

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