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TSHG5410

High Speed Infrared Emitting Diode

TSHG5410 Features

* Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radia

TSHG5410 General Description

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS

* Infrared radiation source for operation with CMOS cameras

* High speed IR data transmission .

TSHG5410 Datasheet (161.68 KB)

Preview of TSHG5410 PDF

Datasheet Details

Part number:

TSHG5410

Manufacturer:

Vishay ↗ Siliconix

File Size:

161.68 KB

Description:

High speed infrared emitting diode.

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TSHG5410 High Speed Infrared Emitting Diode Vishay Siliconix

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