TSHG5410 Datasheet (Vishay Siliconix) - High Speed Infrared Emitting Diode

TSHG5410, High Speed Infrared Emitting Diode

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

in APPLICATIONS * Infrared radiation source for operation with CMOS cameras * High speed IR data transmission

TSHG5410 Features

* Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radia