TSHG6200 High Speed Infrared Emitting Diode

Vishay Siliconix

Description

www.vishay.com TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8389 .
TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, unti.

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Datasheet Specifications

Part number: TSHG6200
Manufacturer: Vishay ↗ Siliconix
File Size: 104.63 KB
Datasheet: TSHG6200_VishaySiliconix.pdf
Description: High Speed Infrared Emitting Diode

Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Peak wavelength: λp = 850 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 10°
* Low forward voltage

Applications

* Infrared radiation source for operation with CMOS cameras
* High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG6200 Ie (mW/sr) 180 Note
* Test conditions see table “Basic Characteristics” ϕ (deg) ± 10 λp (nm) 850 tr (ns) 20 ORDERING INFORMATION ORDERING C

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TSHG6200 High Speed Infrared Emitting Diode Vishay Siliconix

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