TSHG6200 - High Speed Infrared Emitting Diode

Vishay Siliconix

TSHG6200 Datasheet Preview — Preview of TSHG6200 PDF

Datasheet Details

Part number	TSHG6200
Manufacturer	Vishay ↗ Siliconix
File Size	104.63 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG6200_VishaySiliconix.pdf

TSHG6200 Product details

Description

TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Peak wavelength: λp = 850 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 18 MHz.
Good spectral matching with CMOS cameras.
Compliant to RoHS Directive 2002/95/EC an.

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Published: Apr 2, 2007 |