TSHG6410 - High Speed Infrared Emitting Diode

Vishay Siliconix

TSHG6410 Datasheet Preview — Preview of TSHG6410 PDF

Datasheet Details

Part number	TSHG6410
Manufacturer	Vishay ↗ Siliconix
File Size	111.99 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG6410_VishaySiliconix.pdf

TSHG6410 Product details

Description

TSHG6410 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Peak wavelength: λp = 850 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 15°.
Low forward voltage.
Suitable for high pulse current operation.
Good spectral matching with Si photodetectors.
Material categorization: for definitions of compliance please see www. vishay. com/doc?.

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Published: Feb 2, 2012 |