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TSHG8200

High Speed Infrared Emitting Diode

TSHG8200 Features

* Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half inte

TSHG8200 General Description

TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS

* Infrared radiation source for operation with CMOS cameras (illumination)

* High speed IR dat.

TSHG8200 Datasheet (110.31 KB)

Preview of TSHG8200 PDF

Datasheet Details

Part number:

TSHG8200

Manufacturer:

Vishay ↗ Siliconix

File Size:

110.31 KB

Description:

High speed infrared emitting diode.

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TSHG8200 High Speed Infrared Emitting Diode Vishay Siliconix

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