VSMY7850X01 Datasheet - Vishay Siliconix

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VSMY7850X01 High Power Infrared Emitting Diode

www.DataSheet.co.kr VSMY7850X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology .
VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal re.

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Datasheet Details

Part number:

VSMY7850X01

Manufacturer:

Vishay ↗ Siliconix

File Size:

184.62 KB

Description:

High Power Infrared Emitting Diode

Features

* Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:
* p = 850 nm High reliability

Applications

* Infrared illumination for CMOS cameras (CCTV)
* Driver assistance systems
* Machine vision IR data transmission PRODUCT SUMMARY COMPONENT VSMY7850X01 Ie (mW/sr) 170  (deg) ± 60
* p (nm) 850 tr (ns) 20 Note
* Test conditions see table “Basic Characteristics” O

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VSMY7850X01 High Power Infrared Emitting Diode Vishay Siliconix

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