VSMY7850X01 Datasheet (Vishay Siliconix) - High Power Infrared Emitting Diode

VSMY7850X01, High Power Infrared Emitting Diode

VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package.

A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1 A.

APPLICATIONS

VSMY7850X01 Features

* Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:

* p = 850 nm High reliability