VSMY98525DS High Power Infrared Emitting Diode

Vishay

Description

www.vishay.com VSMY98525DS Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology .
As part of the SurfLightTM portfolio, the VSMY98525DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant powe.

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Datasheet Specifications

Part number: VSMY98525DS
Manufacturer: Vishay ↗
File Size: 209.97 KB
Datasheet: VSMY98525DS-Vishay.pdf
Description: High Power Infrared Emitting Diode

Features

* Package type: surface-mount
* Double stack technology
* Package form: power QFN
* Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00
* Peak wavelength: λp = 850 nm
* Zener diode for ESD protection up to 2 kV
* High radiant power
* High

Applications

* Infrared illumination for CMOS cameras (CCTV)
* Illumination for cameras (3D gaming)
* Machine vision PRODUCT SUMMARY COMPONENT VSMY98525DS Ie (mW/sr) 1000 Note
* Test conditions see table “Basic Characteristics” ϕ (deg) ± 25 λp (nm) 850 tr (ns) 14 ORDERING

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VSMY98525DS High Power Infrared Emitting Diode Vishay

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