Datasheet4U Logo Datasheet4U.com

VSMY98545DS High Power Infrared Emitting Diode

VSMY98545DS Description

www.vishay.com VSMY98545DS Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology .
As part of the SurfLightTM portfolio, the VSMY98545DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant powe.

VSMY98545DS Features

* Package type: surface mount
* Double stack technology
* Package form: high power SMD with lens
* Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
* Peak wavelength: λp = 850 nm
* Zener diode for ESD protection up to 2 kV
* High radiant power

📥 Download Datasheet

Preview of VSMY98545DS PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VSMY98545DS
Manufacturer
Vishay ↗
File Size
254.44 KB
Datasheet
VSMY98545DS-Vishay.pdf
Description
High Power Infrared Emitting Diode

📁 Related Datasheet

  • VSMY1850 - High Speed Infrared Emitting Diodes (Vishay Siliconix)
  • VSMY2850G - High Speed Infrared Emitting Diodes (Vishay Siliconix)
  • VSMY2850RG - High Speed Infrared Emitting Diodes (Vishay Siliconix)
  • VSMY3850 - High Speed Infrared Emitting Diode (Vishay Siliconix)
  • VSMY7850X01 - High Power Infrared Emitting Diode (Vishay Siliconix)
  • VSMY7852X01 - High Power Infrared Emitting Diode (Vishay Siliconix)
  • VSM002NE4MS-G - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
  • VSM003N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)

📌 All Tags

High Power Infrared Emitting Diode Vishay
Vishay VSMY98545DS-like datasheet