VSMY7852X01 Datasheet - Vishay Siliconix

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VSMY7852X01 High Power Infrared Emitting Diode

www.DataSheet.co.kr VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology F.
VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal re.

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Datasheet Details

Part number:

VSMY7852X01

Manufacturer:

Vishay ↗ Siliconix

File Size:

182.97 KB

Description:

High Power Infrared Emitting Diode

Features

* Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:
* p = 850 nm High reliability

Applications

* Infrared illumination for CMOS cameras (CCTV)
* Driver assistance systems
* Machine vision IR data transmission PRODUCT SUMMARY COMPONENT VSMY7852X01 Ie (mW/sr) 42  (deg) ± 60
* p (nm) 850 tr (ns) 15 Note
* Test conditions see table “Basic Characteristics” OR

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VSMY7852X01 High Power Infrared Emitting Diode Vishay Siliconix

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