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TSSS2600 Infrared Emitting Diode

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Description

www.vishay.com TSSS2600 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 94 8672 .
TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens.

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Features

* Package type: leaded
* Package form: side view
* Dimensions (L x W x H in mm): 3.6 x 2.2 x 5
* Peak wavelength: λp = 950 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 25°, horizon

Applications

* Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e. g. TEST2600) PRODUCT SUMMARY COMPONENT TSSS2600 Ie (mW/sr) 2.6 Note
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