Datasheet4U Logo Datasheet4U.com

IRFD113 Power MOSFET

IRFD113 Description

www.vishay.com IRFD113, SiHFD113 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration .
The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.

IRFD113 Features

* For Automatic Insertion
* Compact Plastic Package
* End Stackable
* Fast Switching
* Low Drive Current
* Easily Paralleled
* Excellent Temperature Stability
* Compliant to RoHS Directive 2002/95/EC Note
* Pb containing termination

📥 Download Datasheet

Preview of IRFD113 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFD110PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFD111 - FIELD EFFECT POWER TRANSISTOR (GE)
  • IRFD112 - (IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR (GE Solid State)
  • IRFD120PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFD121 - N-Channel MOSFET (Harris Semiconductor)
  • IRFD122 - N-Channel Power MOSFET (Harris Semiconductor)
  • IRFD1Z0 - N-Channel MOSFET (Harris Semiconductor)
  • IRFD1Z1 - N-Channel MOSFET (Harris Semiconductor)

📌 All Tags

Vishay IRFD113-like datasheet