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IRFD9110 - Power MOSFET

IRFD9110 Description

www.vishay.com IRFD9110 Vishay Siliconix Power MOSFET HVMDIP S G S G D D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Q.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRFD9110 Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* P-channel
* Fast switching
* 175 °C operating temperature
* Material categorization: for definitions of compliance please see www. vishay. com

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Power MOSFET Vishay
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