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IRFP254N Power MOSFET

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Description

Power MOSFET IRFP254N, SiHFP254N Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 .
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* Advanced Process Technology
* Dynamic dV/dt Rating
* 175 °C Operating Temperature
* Fully Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS
* COMPLIANT DE

Applications

* The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247 IRFP254NPbF SiHFP254N-E3 IRFP254N SiHFP254N ABSOLUTE

IRFP254N Distributors

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IRFP254 IRFP254A IRFP254B IRFP250 IRFP250A IRFP250B

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