Description
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 25 Qgs (nC) 5.
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
* Halogen-free According to IEC 61249-2-21
Definition
* Advanced Process Technology
* Surface Mount (IRFZ24S, SiHFZ24S)
* Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
* 175 °C Operating Temperature
* Fast Switching
* Compliant to RoHS Directive
Applications
* The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connec