IRLD014 - Power MOSFET
G S D S N-Channel MOSFET G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in mult
IRLD014 Features
* 60 0.20
* Dynamic dV/dt Rating
* For Automatic Insertion
* End Stackable
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature
* Fast Switching
* Compliant to RoHS Directive 2002/95/EC Availab
