* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization
MBRB10100-M3 Datasheet (89.42 KB)
MBRB10100-M3
89.42 KB
High-voltage trench mos barrier schottky rectifier.
www.vishay.com
MBRB1090-M3, MBRB10100-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
K
2
1
M.
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