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MBRB1045 - High Performance Schottky Rectifier

This page provides the datasheet information for the MBRB1045, a member of the MBRB1035-1 High Performance Schottky Rectifier family.

Datasheet Summary

Description

This Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Features

  • 150 °C TJ operation.
  • TO-220 and D2PAK packages.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for defini.

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Datasheet preview – MBRB1045

Datasheet Details

Part number MBRB1045
Manufacturer Vishay
File Size 161.87 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet MBRB1045 Datasheet
Additional preview pages of the MBRB1045 datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-MBRB1035-M3, VS-MBRB1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 10 A 35 V, 45 V 0.
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