MBRB1090-M3 High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com MBRB1090-M3, MBRB10100-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB K 2 1 M.

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Datasheet Specifications

Part number: MBRB1090-M3
Manufacturer: Vishay ↗
File Size: 89.42 KB
Datasheet: MBRB1090-M3-Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization

Applications

* For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Termin

MBRB1090-M3 Distributors

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MBRB1090-M3 High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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