Description
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schot.
Features
* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Applications
* For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Term