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SIR862DP N-Channel MOSFET

SIR862DP Description

New Product N-Channel 25-V (D-S) MOSFET SiR862DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0028 at VGS = 10 V 25 0.0035 at VGS = 4.5.

SIR862DP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: SiR862DP-T1-GE3 (L

SIR862DP Applications

* DC/DC Conversion - Low-Side Switch
* Notebook
* Server
* Game Console D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ

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N-Channel MOSFET Vishay
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