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SiR802DP N-Channel MOSFET

SiR802DP Description

New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.005 at VGS = 10 V 0.0057 at VGS = 4.5 V 0.

SiR802DP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Gen III Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested

SiR802DP Applications

* 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm
* DC/DC
* Low Voltage Drive
* POL D G Bottom View Ordering Information: SiR802DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Sour

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N-Channel MOSFET Vishay
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