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SiR812DP N-Channel MOSFET

SiR812DP Description

www.vishay.com SiR812DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX.0.00145 at VGS = 10 V 0.00200 at.

SiR812DP Features

* TrenchFET® power MOSFET
* 100 % Rg and UIS tested

SiR812DP Applications

* Motor control
* Industrial
* Load switch
* ORing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (

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N-Channel MOSFET Vishay
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