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SiR818DP N-Channel 30 V (D-S) MOSFET

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Description

New Product N-Channel 30 V (D-S) MOSFET SiR818DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0028 at VGS = 10 V 30 0.0033 at VGS = 4.5.

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Datasheet Specifications

Part number
SiR818DP
Manufacturer
Vishay ↗
File Size
309.86 KB
Datasheet
SiR818DP-Vishay.pdf
Description
N-Channel 30 V (D-S) MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Gen III Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Low-Side Switch for DC/DC Converters - Notebook PC - Servers - POL
* ORing D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °

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