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SiR808DP N-Channel 25 V (D-S) MOSFET

SiR808DP Description

N-Channel 25 V (D-S) MOSFET SiR808DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 25 RDS(on) () 0.0089 at VGS = 10 V 0.0119 at VGS = 4.5 V ID (A)a, .

SiR808DP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested
* 100 % UIS Tested

SiR808DP Applications

* Synchronous Buck Converter - High-Side Switch
* High Frequency Switching G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C)

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Datasheet Details

Part number
SiR808DP
Manufacturer
Vishay ↗
File Size
307.72 KB
Datasheet
SiR808DP-Vishay.pdf
Description
N-Channel 25 V (D-S) MOSFET

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N-Channel D-S MOSFET Vishay
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