* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested
* 100 % UIS Tested
SiR808DP Datasheet (307.72 KB)
SiR808DP
307.72 KB
N-channel 25 v (d-s) mosfet.
N-Channel 25 V (D-S) MOSFET SiR808DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 25 RDS(on) () 0.0089 at VGS = 10 V 0.0119 at VGS = 4.5 V ID (A)a, .
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