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Si8424CDB N-Channel MOSFET

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Description

www.vishay.com Si8424CDB Vishay Siliconix N-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX.0.020 at VGS = 4.5 V 0.021 at VGS.

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Features

* TrenchFET® power MOSFET
* Low-on resistance
* Ultra-small 1.6 mm x 1.6 mm maximum outline
* Ultra-thin 0.6 mm maximum height

Applications

* Mobile computing, smart phones, D tablet PCs - Load switch - Low voltage drop switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Dra

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