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SiR888DP N-Channel 25-V (D-S) MOSFET

SiR888DP Description

New Product N-Channel 25-V (D-S) MOSFET SiR888DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.00325 at VGS = 10 V 25 0.0040 at VGS = 4..

SiR888DP Features

* Halogen-free
* TrenchFET® Power MOSFET
* 100 % Rg Tested

SiR888DP Applications

* Low-Side Switch in Synchronous Buck Converter 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SIR888DP-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol D

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Datasheet Details

Part number
SiR888DP
Manufacturer
Vishay ↗
File Size
127.38 KB
Datasheet
SiR888DP-Vishay.pdf
Description
N-Channel 25-V (D-S) MOSFET

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