SiSS80DN Datasheet - Vishay

SiSS80DN N-Channel 20V MOSFET

SiSS80DN Features

* TrenchFET® Gen IV power MOSFET

* Less than 0.92 mΩ in a package footprint of 10.89 mm2

* 2.5 V rated RDS(on)

* Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss

* 100 % Rg and UIS tested

* Material categorization: for definitio

Datasheet Details

SiSS80DN

220.46 KB

N-channel 20v mosfet.

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SiSS80DN SiSS80DN N-Channel 20V MOSFET Vishay

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