SiSS80DN - N-Channel 20V MOSFET
SiSS80DN Features
* TrenchFET® Gen IV power MOSFET
* Less than 0.92 mΩ in a package footprint of 10.89 mm2
* 2.5 V rated RDS(on)
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitio