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V20M120C Datasheet - Vishay

V20M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V20M120C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* AEC-Q101 qualified

* Material categorization: for definitions of compliance please see www.visha

V20M120C-Vishay.pdf

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Datasheet Details

Part number:

V20M120C

Manufacturer:

Vishay ↗

File Size:

146.97 KB

Description:

Dual high-voltage trench mos barrier schottky rectifier.

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V20M120C V20M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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